| PART |
Description |
Maker |
| PS21962-A PS21962-C |
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21964-4A PS21964-4 PS21964-4C PS21964-4W |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| PS21965-T |
600V/20A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| PS21965-ST |
600V/20A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| MAX7411CPA MAX7411CUA MAX7411EPA MAX7411EUA MAX741 |
5th Order, Lowpass, Elliptic, Switched-Capacitor Filters
5th-Order Lowpass Elliptic Switched-Capacitor Filters
5th-Order, Lowpass, Elliptic,Switched-Capacitor Filters
5th-Order, Lowpass, Elliptic, Switched-Capacitor Filters
5th-Order / Lowpass / Elliptic / Switched-Capacitor Filters
Data Selectors/Multiplexers 20-LCCC -55 to 125
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maixm
Maxim Integrated Products, Inc.
|
| APT6013B2LL APT6013LLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS V 600V 43A 0.130 Ohm
|
Advanced Power Technology
|
| APT6017JFLL |
POWER MOS 7 600V 31A 0.170 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| APT6013JLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
POWER MOS 7 600V 39A 0.130 Ohm
|
Advanced Power Technology, Ltd.
|
| IRGSL4B60KD1 IRGS4B60KD1 IRGB4B60KD1 |
600V Low-Vceon Non Punch Through Copack IGBT in a TO-262 package
600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package
600V Low-Vceon Non Punch Through Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| IRGSL4B60K IRGB4B60K IRGS4B60K |
600V Low VCEon Copack IGBT in a TO-262 package
600V Low VCEon Copack IGBT in a D2Pak package
600V Low VCEon Copack IGBT in a TO-220 package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
